Niet blij met je aankoop? Geeft niet! Bij ons kun je binnen 30 dagen retourneren
Met een cadeaubon zit je altijd goed. De ontvanger kan de cadeaubon voor alles uit ons assortiment inwisselen.
Retourneren binnen 30 dagen
To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.
Hoi! Ik ben Libroamiko, je boekadviseur.
Hoe kan ik je helpen?