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Synthesis, Structural, Electrical, Optical and Thermoelectrical
Properties of Indium Doped Lead Selenide Thin Films
Engels
112 b
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Thin film science has received tremendous attention in last five-six decades, because of numerous and widespread applications of thin films in diverse fields such as electronic industries and hybrid circuits, optical devices, sensors, superconductivity and recently high memory computer elements etc. The II - VI and IV-VI chalcogenide compounds are of prime importance from the point of view of device applications in various fields. They have been considered as promising materials for technological applications in the field of IR devices, diodes, lasers, thermo photovoltaic converts, nanowires, solar cell, electroluminescence. Lead chalcogenides have narrow energy gap and are semiconductors having structural and electronic properties like high carrier mobility, high dielectric constants, an attempt has been made to study on end compound of Pb1-xInxSe that is PbSe and InSe films as well as middle compounds. The Fermi energy, electrical energy band gap, mobility, carrier concentration, thermo electric properties, scattering parameters, optical direct and indirect band gap, absorption coefficient, extinction coefficient were evaluated.
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